Enhanced performance of solar-blind photodetector of hexagonal boron nitride with bottom-contact electrodes

Hexagonal boron-nitride nanomesh magnets

Defect-related photoluminescence of hexagonal boron nitride

Photoluminescence of polycrystalline hexagonal boron nitride (hBN) was measured by means of time-and energy-resolved spectroscopy methods. The observed bands are related to DAP transitions, impurities and structural defects. The excitation of samples by high-energy photons above 5.4 eV enables a phenomenon of photostimulated luminescence (PSL), which is due to distantly trapped CB electrons and...

Optoelectronic properties of hexagonal boron nitride epilayers

This paper summarizes recent progress primarily achieved in authors’ laboratory on synthesizing hexagonal boron nitride (hBN) epilayers by metal organic chemical vapor deposition (MCVD) and studies of their structural and optoelectronic properties. The structural and optical properties of hBN epilayers have been characterized by x-ray diffraction (XRD) and photoluminescence (PL) studies and com...

Reversible intercalation of hexagonal boron nitride with Brønsted acids.

Hexagonal boron nitride (h-BN) is an insulating compound that is structurally similar to graphite. Like graphene, single sheets of BN are atomically flat, and they are of current interest in few-layer hybrid devices, such as transistors and capacitors, that contain insulating components. While graphite and other layered compounds can be intercalated by redox reactions and then converted chemica...

TOPICAL REVIEW Graphene on Hexagonal Boron Nitride

The field of graphene research has developed rapidly since its first isolation by mechanical exfoliation in 2004. Due to the relativistic Dirac nature of its charge carriers, graphene is both a promising material for next-generation electronic devices and a convenient low-energy testbed for intrinsically high-energy physical phenomena. Both of these research branches require the facile fabricat...